Mitsubishi Electric to Ship Samples of S1-Series HVIGBT Module

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Mitsubishi Electric’s 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models^* for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT^**) structure helps reduce both power loss and thermal resistance for more efficient inverters. Furthermore, Mitsubishi Electric’s proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products,^* resulting in more flexible insulation designs for compatibility with a wide range of inverter types.

1. *Comparison with CM1200DC-34N, CM1200E4C-34N and CM1200DC-34S.
2. **Mitsubishi Electric’s proprietary IGBT chip construction incorporating carrier-store effect.