US Navy selects GeneSiC for new Phase I and Phase II SBIR Awards

DULLES, VA, Aug 1, 2008 -- GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, ultra-high voltage, and detector applications, announces that it has been selected by the US Navy for two Small Business Innovation Research (SBIR) awards. These awards will allow GeneSiC to develop high voltage SiC devices that are critical for enabling the integration of high power RADARs, Directed Energy Weapons (DEW) and ship propulsion systems with the modern on-board power sources.
The Projects awarded to GeneSiC are:
• The success achieved by GeneSiC in its previous Phase I SBIR project has prompted the US Navy’s Naval Surface Warfare Center to select its Phase II SBIR proposal for award negotiations. This project is focused on developing multi-kV SiC devices for power conditioning and power distribution systems using legacy and modern ship bus infrastructure.
• Navy’s Space and Naval Warfare Systems Command (SPAWAR) has completed award formalities on another Phase I SBIR award. This project is focused on the design and fabrication of novel SiC devices for high-frequency, high-power RADAR applications.
"We are pleased with the confidence expressed by various offices within the US Navy in our high power SiC device solutions. These projects will enable GeneSiC to develop industry-leading SiC devices through its innovative device solutions" said Dr. Ranbir Singh, GeneSiC’s President. "Power devices targeted in these programs will allow Megawatt-level power to be handled with digital precision. This technology has the potential to revolutionize critical commercial and military hardware, not yet possible due to the limitations of contemporary Silicon based technologies. These device development programs can also significantly improve the efficiency levels in power inverters used to integrate wind and solar energy systems with the power grid" he added.
GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.

About GeneSiC Semiconductor, Inc.
GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has executed on prime and sub-contracts from major US Government agencies including US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense.

Contact Information

Ranbir Singh

President

GeneSiC Semiconductor Inc.

Contact via E-mail